| 发明名称 |
Method of producing semiconductor device |
| 摘要 |
A method of producing a semiconductor device according to an aspect of the present invention comprises forming a seed film of Cu on a substrate; polycrystallizing the seed film formed on the substrate; and forming a plated film of Cu on the polycrystallized seed film by electrolytic plating.
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| 申请公布号 |
US2006024952(A1) |
申请公布日期 |
2006.02.02 |
| 申请号 |
US20050136494 |
申请日期 |
2005.05.25 |
| 申请人 |
IKENOUE HIROSHI;KANEKO HISASHI;HATANO MASAAKI;YAMASHITA SOICHI;YODA TAKASHI;SEKINE MAKOTO |
发明人 |
IKENOUE HIROSHI;KANEKO HISASHI;HATANO MASAAKI;YAMASHITA SOICHI;YODA TAKASHI;SEKINE MAKOTO |
| 分类号 |
H01L21/288;H01L21/4763;H01L21/00;H01L21/44;H01L21/768 |
主分类号 |
H01L21/288 |
| 代理机构 |
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