| 摘要 |
PROBLEM TO BE SOLVED: To prevent the diffusion of Mn and to suppress the degradation of MR characteristics. SOLUTION: A magnetic random access memory includes a magnetoresistive element 1 which has a recording layer 30, a fixed layer 10, and a tunnel barrier layer 20 arranged between the recording layer and the fixed layer. The fixed layer comprises an anti-ferromagnetic layer 12, a first ferromagnetic layer 13 formed on the anti-ferromagnetic layer, a first nonmagnetic layer 14 formed on the first ferromagnetic layer, a second ferromagnetic layer 15 formed on the first nonmagnetic layer and magnetically coupled with the first ferromagnetic layer by first magnetic coupling through the first nonmagnetic layer, a second nonmagnetic layer 16 formed on the second ferromagnetic layer and provided with a film thickness different from the film thickness of the first nonmagnetic layer, and a third ferromagnetic layer 17 formed on the second nonmagnetic layer and magnetically coupled with the second ferromagnetic layer by second magnetic coupling through the second nonmagnetic layer. COPYRIGHT: (C)2006,JPO&NCIPI
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