SEMICONDUCTOR EMITTING LIGHT AND METHOD FOR MANUFACTURING SEMICONDUCTOR EMITTING LIGHT

摘要

There is provided a semiconductor light emitting diode (LED) whose driving voltage is reduced and whose optical efficiency is improved and a method of manufacturing the same. The method includes the steps of forming a first GaN based layer, forming an activation layer on the first GaN based layer, forming a low temperature delta doping layer for increasing the density of holes on the activation layer, and forming a second GaN based layer on the low temperature delta doping layer.