发明名称 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN
摘要 <p>A positive resist composition comprising a substrate for pattern creating material (A) containing a protected form (X1) of polyhydric phenol compound (x) of 300 to 2500 molecular weight having two or more phenolic hydroxyls wherein the phenolic hydroxyls are partially protected by an acid-dissociative dissolution inhibiting group and an acid generator component (B) capable of generating an acid upon exposure, wherein the component (B) contains an onium salt acid generator (B1) having an alkylsulfonate ion as an anion.</p>
申请公布号 WO2006011442(A1) 申请公布日期 2006.02.02
申请号 WO2005JP13564 申请日期 2005.07.25
申请人 TOKYO OHKA KOGYO CO., LTD.;SHIONO, DAIJU;HIRAYAMA, TAKU;HADA, HIDEO 发明人 SHIONO, DAIJU;HIRAYAMA, TAKU;HADA, HIDEO
分类号 G03F7/004;G03F7/039;H01L21/027;(IPC1-7):G03F7/039 主分类号 G03F7/004
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