Solid-state imaging device production method and solid-state imaging device

摘要

A solid-state imaging device production method is provided. A light-receiving section 12 is formed on a semiconductor substrate 1 . A first insulating film 6 is formed on a light-receiving section 12 and the semiconductor substrate 1 . A metal film for wiring is formed on the first insulating film 6 . A protection film 8 is formed on the metal film. A resist film is formed on a predetermined region of the protection film. A portion of the protection film 8 and a portion of the metal film is removed by using the resist film to form a wire 7 whose upper face is covered by the protection film 8 . A hydrogen-containing second insulating film 10 is formed on the wire 7 and the first insulating film 6 . A heating process is performed for the second insulating film 10 . An anisotropic etching process is performed for the entire surface of the second insulating film 10 to remove the second insulating film 10.