| 摘要 |
A method is provided for making a laterally extended drain DMOS transistor. According to the method, a gate having two substantially parallel lateral faces is produced on a substrate, and a drain spacer and a source spacer made of an insulating material are produced on the lateral faces of the gate. The drain spacer and the source spacer are located on the drain side and the source side of the transistor, respectively. The width of the drain spacer is greater than a width of the source spacer. A DMOS transistor having such a gate and spacers is also provided. The width of the drain spacer is preferably substantially greater than the width of the source spacer, and is more preferably greater than the value of the absolute uncertainty relative to a dimension of a resin layer that is needed to perform a photolithography operation on the substrate.
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