发明名称 |
Directionally controlled growth of nanowhiskers |
摘要 |
Nanowhiskers are grown in a non-preferential growth direction by regulation of nucleation conditions to inhibit growth in a preferential direction. In a preferred implementation, <001> III-V semiconductor nanowhiskers are grown on an (001) III-V semiconductor substrate surface by effectively inhibiting growth in the preferential <111>B direction. As one example, <001> InP nano-wires were grown by metal-organic vapor phase epitaxy directly on (001) InP substrates. Characterization by scanning electron microscopy and transmission electron microscopy revealed wires with nearly square cross sections and a perfect zincblende crystalline structure that is free of stacking faults.
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申请公布号 |
US2006019470(A1) |
申请公布日期 |
2006.01.26 |
申请号 |
US20050049293 |
申请日期 |
2005.02.03 |
申请人 |
BTG INTERNATIONAL LIMITED |
发明人 |
SEIFERT WERNER;SAMUELSON LARS I.;OHLSSON BJORN J.;BORGSTROM LARS M. |
分类号 |
H01L21/20;B01J23/52;C30B11/12;C30B25/00;C30B29/60;C30B29/62 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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