| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide memory technology for a non-volatile memory which is manufactured easily, and corresponds to the application of high density. <P>SOLUTION: A multiple-gate memory cell comprises a semiconductor body and a plurality of gates 50, 51 arranged in series on the semiconductor body. A charge storage structure on the semiconductor body includes two charge trapping locations, beneath each of all or some of the gates in the plurality of gates 50, 51. Circuitry for conducting source 55 and drain 56 bias voltages to the semiconductor body near a first gate 50 and a last gate 51 in the series, and circuitry to conduct gate bias voltages to the plurality of gates are provided. The multiple-gate memory cell includes a continuous, multiple-gate channel region 58 beneath the plurality of gates 50, 51 in the series, with charge storage locations between some or all of the gates. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
