发明名称 |
Method of forming ultra-thin silicidation-stop extensions in mosfet devices |
摘要 |
Very low resistance, scaled in MOSFET devices are formed by employing thin silicidation-stop extension that act both as a silicidation "stop" barriers and as thin interface layers between source/drain silicide regions and channel region of the MOSFET. By acting as silicidation stops, the silicidation-stop extensions confine silicidation, and are not breached by source/drain silicide. This permits extremely thin, highly-doped silicidation-stop extensions to be formed between the silicide and the channel, providing an essentially ideal, low series resistance interface between the silicide and the channel.
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申请公布号 |
US6989322(B2) |
申请公布日期 |
2006.01.24 |
申请号 |
US20030707175 |
申请日期 |
2003.11.25 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GLUSCHENKOV OLEG G.;CABRAL, JR. CYRIL;DOKUMACI OMER;LAVOIE CHRISTIAN |
分类号 |
H01L21/3205;H01L21/285;H01L21/336;H01L21/4763;H01L21/8234;H01L27/092;H01L29/08;H01L29/78 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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