发明名称 Thin film magnetic memory device having data read current tuning function
摘要 A constant current supply circuit generates a constant current according to a control voltage. A data read current passing through a tunneling magneto-resistance element constituting a memory cell during data write is set according to the constant current. Constant current supply circuit includes a voltage adjustment circuit generating a reference voltage adjustable according to an external input, a current source generating the constant current according to the reference voltage, and a voltage switch circuit transmitting the reference voltage to the current source as a control voltage during a normal operation.
申请公布号 US6990024(B2) 申请公布日期 2006.01.24
申请号 US20030663674 申请日期 2003.09.17
申请人 RENESAS TECHNOLOGY CORP. 发明人 HIDAKA HIDETO
分类号 G11C16/04;G11C11/15 主分类号 G11C16/04
代理机构 代理人
主权项
地址