| 摘要 |
<p>Semiconductor devices and methods of forming a barrier metal in semiconductor devices are disclosed. A disclosed semiconductor device includes a metal layer on a semiconductor substrate; an interlayer dielectric layer on the metal layer, a hole in the interlayer dielectric layer that exposes a portion of the metal layer; and a barrier metal on inner walls of the hole. The barrier metal is made of TaSiN having a resistivity less than or equal to about 10,000 muohm-cm.</p> |
