| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device suppressing the occurrence of a deviation of a crystal orientation. <P>SOLUTION: Facets 1 are formed as inclined surfaces over an arranged surface of an underlying semiconductor layer 2 on which a plurality of the facets 1 are arranged, and a semiconductor device body is formed in a low defect density region formed in a selective growth embedded semiconductor layer 3 covering an underlying semiconductor layer 2, to improve the characteristics. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
