| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To improve a random access memory array about array structure supporting necessity of a decreased write-in current for a memory array. <P>SOLUTION: A random access memory array includes first random access memory elements arranged in a plurality of rows and columns for storing data words at a multiple memory locations. The memory array further includes second random access memory elements arranged in at least one additional column. Each second random access memory element is associated with a memory location to store a flag value indicative of whether the data word stored at that memory location is a true or complement version. The individual memory elements may comprise magnetic random access memory elements. Alternatively, the individual memory elements may comprise flash memory cells. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
