发明名称 PATTERN FORMATION METHOD, MASK REPAIR METHOD AND METHOD FOR MANUFACTURING DEVICE USING THEM
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a writing method by which the outgoing of an electron beam can be turned on/off at high speed, or the dimension of a variable formation beam or the character of a character mask can be changed at high speed. <P>SOLUTION: An electron beam discharged from a thermionic emission cathode 1 is accelerated, and it is directed into a square opening 4 to form it into a square shape. The formed square electron beam is patterned by passing it through a character mask 9, and the patterned electron beam is selectively emitted. The patterned electron beam is contracted, positioned and focused by an objective lens 12, and it is given onto a wafer 27. The patterned electron beam is further accelerated between the objective lens 12 and the wafer 27, thereby giving such an energy to the electron beam that can transmit a resist. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2006019326(A) 申请公布日期 2006.01.19
申请号 JP20040192655 申请日期 2004.06.30
申请人 EBARA CORP 发明人 NAKASUJI MAMORU;SATAKE TORU;NOMICHI SHINJI
分类号 H01L21/027;G03F1/20;G03F7/20 主分类号 H01L21/027
代理机构 代理人
主权项
地址