| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, which can reduce defects in damascene wiring by decreasing the concentration of impurities contained in the damascene wiring. SOLUTION: Narrow wiring trenches 1a, each of which has a width of 0.3μm or smaller and wide wiring trenches 1b each of which has a width of more than 0.3μm are formed in an interlayer dielectric 1 on a wafer W. A barrier metal film 2 and a seed film 3 are formed on the interlayer dielectric 1. After that, a film 4 is formed by electrolytic plating so that the film is embedded in the whole of each of the narrow wiring trenches 1a and in a part of each of the wide wiring trenches 1b. A film 5, which has an impurity concentration lower than that of the film 4, is formed by sputtering so that it is embedded in the other part of each of the wide wiring trenches 1b. Impurities in the film 4 are diffused into the film 5 by heat treatment so as to form a wiring film 6. Finally, unwanted portions of the barrier metal film 2 and the wiring film 6 on the interlayer dielectric 1 are removed, and narrow wirings and wide wirings are formed. COPYRIGHT: (C)2006,JPO&NCIPI |
