Plasma driven, N-Type semiconductor, thermoelectric power superoxide ion generator with critical bias conditions

摘要

A plasma is generated inside a barrier enclosure made specifically of N-Type semiconductive material, said plasma thus generating a thermal gradient across said barrier which drives electrons through said barrier via the thermoelectric power of said N-Type semiconductor, said electrons thus being liberated on the opposing side of said barrier where they interact with oxygen in the air to form the superoxide ion. O₂^-, and a second electrode on said opposing being at a critical minimum negative bias potential to quench collateral production of positive ions and ensuring production only of negative, O₂^-, ions.