发明名称 Semiconductor lasers device
摘要 The device has a stack (11) of layers, arranged on a semiconductor substrate (10), in which the composition and thickness are chosen to form a distributed feedback (DFB) laser. A stack (12) of layers has thickness slightly different than that of the stack (11). The layer stack (12) is adjoining to the layer stack (11), and is arranged to form another distributed feedback (DFB) laser.
申请公布号 EP1617471(A1) 申请公布日期 2006.01.18
申请号 EP20040405445 申请日期 2004.07.13
申请人 ALPES LASERS S.A. 发明人 HVOZDARA, LUBOS;MUELLER, ANTOINE;BONETTI, YARGO
分类号 H01L23/367;H01S5/12;H01S5/34 主分类号 H01L23/367
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