A GATE ELECTRODE OF NONVOLATILE MEMORY DEVICE AND A METHOD FOR FORMING THE SAME,申请号KR20040054063-传众专利搜索

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发明名称	A GATE ELECTRODE OF NONVOLATILE MEMORY DEVICE AND A METHOD FOR FORMING THE SAME
摘要
申请公布号	KR20060005177(A)	申请公布日期	2006.01.17
申请号	KR20040054063	申请日期	2004.07.12
申请人	MAGNACHIP SEMICONDUCTOR, LTD.	发明人	SONG, KANG HOE
分类号	H01L21/8247;H01L27/115	主分类号	H01L21/8247
代理机构		代理人
主权项
地址

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