| 摘要 |
PROBLEM TO BE SOLVED: To realistically and precisely perform an evaluation design of semiconductor device. SOLUTION: Gate length information 1g of pattern data 323b of a gate electrode is extracted. Distance pieces of information sg1 and sg2 of the pattern data 323b of the gate electrode from pattern data 323a and 323c of gate electrodes adjacent to the pattern data 323b is calculated. Dispersion parameters of the pattern data 323b of the gate electrode are extracted from a dispersion parameter table 254 for every edge. Dispersion information is calculated for every edge. The calculated dispersion information Dg is added to the gate length information 1g (lg=120 nm) in the description of a net list 600. COPYRIGHT: (C)2006,JPO&NCIPI
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