| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME |
| 摘要 |
<p>Disclosed is a semiconductor device comprising an insulating film (6) formed on a substrate (1), a buried metal interconnect (10) formed in the insulating film (6), and a barrier metal film (A1) formed between the insulating film (6) and the metal interconnect (10). The barrier metal film (A1) is composed of a metal oxide film (7), a metal compound film (8) and a metal film (9) sequentially arranged in this order from the side of the insulating film (6) to the side of the metal interconnect (10). The elastic modulus of the metal compound film (8) is higher than that of the metal oxide film (7).</p> |
| 申请公布号 |
WO2006003760(A1) |
申请公布日期 |
2006.01.12 |
| 申请号 |
WO2005JP09270 |
申请日期 |
2005.05.20 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;IKEDA, ATSUSHI;NAKAGAWA, HIDEO;AOI, NOBUO |
发明人 |
IKEDA, ATSUSHI;NAKAGAWA, HIDEO;AOI, NOBUO |
| 分类号 |
(IPC1-7):H01L21/768;H01L21/320;H01L21/285 |
主分类号 |
(IPC1-7):H01L21/768 |
| 代理机构 |
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| 主权项 |
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