| 摘要 |
PROBLEM TO BE SOLVED: To provide a multi-wavelength semiconductor laser and a manufacturing method of it. SOLUTION: The manufacturing method of the multi-wavelength semiconductor laser includes steps of: arranging and forming first and second nitride epitaxial layers on a substrate for nitride single crystal growth in a horizontal direction; separating the first and second nitride epitaxial layers from the substrate for nitride single crystal growth; bonding the first and second nitride epitaxial layers on a first conductive substrate 31; selectively removing the first and second nitride epitaxial layers, exposing a partial upper face of the first conduction-type substrate 31, and forming first and second semiconductor laser structures 20a and 20b; and forming a third semiconductor laser structure 20c on the exposed partial upper face of the first conduction-type substrate 31. COPYRIGHT: (C)2006,JPO&NCIPI
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