| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device where inconvenience, that a semiconductor device applying a WB method, FC method, or TAB method has, is alleviated. <P>SOLUTION: The semiconductor device includes a first semiconductor element 101A which has a first element body 10 and a first element electrode 12a provided on a first surface 10a of the first element body; a wiring substrate 301 which has an insulating substrate 30 and a first wiring layer 32 formed on one main surface of the insulating substrate and where the one main surface is positioned so as to face the second surface of the first element body; a first film 20 which covers at least a part of a surface containing the surface of the first element electrode of the first semiconductor element and at least a part of a surface of the first semiconductor element side of the wiring substrate; and a second wiring layer 25 which is formed on a surface of the wiring substrate side of the first film and contains first wiring 22 having a first end and second end. The first end of the first wiring and the first element electrode are joined, and the second end of the first wiring and a part of the first wiring layer are joined. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
