| 摘要 |
A method for forming a high-K dielectric film by the MOCVD method using an amine-based organic metal compound material, which comprises a step of supplying a raw material gas containing the amine-based organic metal compound material to a process space wherein a surface of a substrate to be treated is exposed, to thereby allow the surface of the substrate to be treated to adsorb the amine-based organic metal compound, a step of supplying a hydrogen gas to the surface of the substrate, and a step of supplying an oxidizing gas to the process space, to thereby form a high-K dielectric film on the surface of the substrate. The method allows the minimization of the amount of carbon remaining in the film.
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