发明名称 |
METHOD FOR CORRECTING INTENSITY OF LIGHT AND EXPOSING A WAFER, AND APPARATUS FOR CORRECTING INTENSITY OF LIGHT AND EXPOSING A WAFER FOR PERFORMING THE SAME |
摘要 |
<p>Correcting light intensity for photolithography may include irradiating light having a first light intensity distribution through a photo mask having a mask pattern to a photosensitive layer on a wafer to form a first pattern corresponding to the mask pattern. A distribution of critical dimensions of the first pattern corresponding to the mask pattern may be determined, and a second light intensity distribution may be determined based on a relation between the first light intensity distribution and the distribution of critical dimensions of the first pattern. Then, light having the second light intensity distribution may be irradiated. Related systems are also discussed.</p> |
申请公布号 |
KR20060001153(A) |
申请公布日期 |
2006.01.06 |
申请号 |
KR20040050194 |
申请日期 |
2004.06.30 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SHIM, WOO SEOK |
分类号 |
H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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