| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem that a boron phosphide layer of a single crystal having little crystal defect density cannot be stably formed due to a large lattice mismatching degree of an Si single crystal substrate and the boron phosphide layer. <P>SOLUTION: A method for vapor phase growing the boron phosphide layer includes steps of vapor phase growing a first boron phosphide layer by setting a ratio of the concentration of a phosphorus source to that of a boron source supplied to a vapor phase growing region is set in a range of 0.5 to 50, subsequently increasing the ratio to a range of 500 to 6,000 within 10 s, and vapor growing a second boron phosphide layer on the first boron phosphide layer. <P>COPYRIGHT: (C)2004,JPO |
