CONCURRENT PROGRAMMING OF NON-VOLATILE MEMORY

摘要

One embodiment of the present invention includes applying a first value to a bit line (A or B. Fig. 12), boosting word lines (WLO/WL31 on Fig 9) associated with the bit line (DRAIN of Tr. 566 on Fig 9) and a common selection line (source of Tr. 500 on Fig 9) to create a first condition based on the first value, and cutting off a boundary non-volatile storage element (e.g. 532 on Fig 9) associated with the common selection line to maintain the first condition for a particular non-volatile storage element (e.g. 518 on Fig 9) associated with the bit line and common selection line. A second value is applied to the bit line and at least a subset of the word lines are boosted to create a second condition for a different non-volatile storage element (e.g. 550 on Fig 9) associated with the bit line and common selection line. The second condition is based on the second value. The first condition and the second condition overlap in time. Both non-volatile storage elements are programmed concurrently, based on their associated conditions.