发明名称 High isolation/high speed buffer amplifier
摘要 A method and circuits of a high isolation and high-speed buffer amplifier capable to handle frequencies in the GHz range have been achieved. The output to input isolation is primary dependent on the gate-source capacitance of the active buffer transistor. Having two or more in series and by reducing the impedance between them a high isolation can be achieved. The input signals are split in several signal paths and are amplified in the push-pull mode using source follower amplifiers. Then the amplified signals are being combined again. The amplified output current is mirrored applying a multiplication factor. Said method and technology can be used for buffer amplifiers having differential input and differential output or having single input and single output or having differential input and single output. A high reversed biased (output to input) isolation and a reduced quiescent current have been achieved.
申请公布号 US6982601(B2) 申请公布日期 2006.01.03
申请号 US20040969519 申请日期 2004.10.20
申请人 DIALOG SEMICONDUCTOR GMBH 发明人 SIBRAI ANDREAS
分类号 H03F3/04;H03F3/18;H03F3/30 主分类号 H03F3/04
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