发明名称 |
Method of transferring devices by lateral etching of a sacrificial layer |
摘要 |
The present invention relates to a method for transferring devices. A sacrificing layer is positioned before the devices are manufactured, and a transition substrate is pasted on the devices. Then, a method for lateral wet etching or a method for lateral wet etching with mechanical stripping is applied for removing or stripping the sacrificing layer so as to separate the devices and a substrate. The separated devices are transferred to the transition substrate so as to meet the requirements for various products and applications.
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申请公布号 |
US6982209(B2) |
申请公布日期 |
2006.01.03 |
申请号 |
US20030704795 |
申请日期 |
2003.11.12 |
申请人 |
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
发明人 |
CHEN YU-CHENG;WANG WEN-TUNG;CHANG JUNG-FANG;TANG CHING-HSUAN |
分类号 |
H01L21/465;H01L27/12;H01L21/02;H01L21/20;H01L21/301;H01L21/762 |
主分类号 |
H01L21/465 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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