发明名称 Method of transferring devices by lateral etching of a sacrificial layer
摘要 The present invention relates to a method for transferring devices. A sacrificing layer is positioned before the devices are manufactured, and a transition substrate is pasted on the devices. Then, a method for lateral wet etching or a method for lateral wet etching with mechanical stripping is applied for removing or stripping the sacrificing layer so as to separate the devices and a substrate. The separated devices are transferred to the transition substrate so as to meet the requirements for various products and applications.
申请公布号 US6982209(B2) 申请公布日期 2006.01.03
申请号 US20030704795 申请日期 2003.11.12
申请人 INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE 发明人 CHEN YU-CHENG;WANG WEN-TUNG;CHANG JUNG-FANG;TANG CHING-HSUAN
分类号 H01L21/465;H01L27/12;H01L21/02;H01L21/20;H01L21/301;H01L21/762 主分类号 H01L21/465
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