METHOD OF FORMING SEMICONDUCTOR PATTERNS

摘要

A method of forming a pattern comprises the steps of stacking an inorganic hard mask layer, an organic mask layer, and an anti-reflecting layer on a substrate where a lower layer is formed, forming a photoresist pattern containing silicon on the anti-reflecting layer, performing an O₂ plasma ashing to form a conformal layer of an oxide glass on the photoresist pattern containing silicon and to dry etch the anti-reflecting layer and the organic mask layer to form an anti-reflecting pattern and an organic mask pattern, removing the photoresist pattern, the anti-reflecting pattern, and the organic mask pattern, and etching the lower layer using a pattern of the inorganic hard mask layer as an etch mask.