发明名称 MOSFET drive circuit, programmable power supply and semiconductor test apparatus
摘要 In a programmable power supply used in a semiconductor test apparatus, high-speed switching of a large current in a current rage or an output relay is enabled. In a MOSFET drive circuit 22 of a switch portion 20 provided in a programmable power supply 10 of a semiconductor test apparatus 1, a capacitor portion 22 - 12 is charged with electric charges by a current from a light receiving portion 22 - 12 of a light insulating element 22 - 1. When an SWA is turned on (SWB is turned off) by changeover of the analog switch portion 22 - 3, a gate of each MOSFET in the MOSFET portion 21 is charged with the electric charges stored in the capacitor portion 22 - 12, and enters an ON state. On the other hand, when the SWB of the analog switch portion 22 - 3 is turned on (SWA is turned off), the gate of the MOSFET is discharged.
申请公布号 US2005280403(A1) 申请公布日期 2005.12.22
申请号 US20040873937 申请日期 2004.06.22
申请人 SATO NOBUHIRO 发明人 SATO NOBUHIRO
分类号 G01R31/26;G01R31/28;G05F1/40;(IPC1-7):G05F1/40 主分类号 G01R31/26
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