| 摘要 |
PROBLEM TO BE SOLVED: To provide a field effect organic transistor which has a small variation in threshold voltage and has a large on-off ratio. SOLUTION: The field effect organic transistor has such a structure that a gate electrode 12 is arranged on top of an insulating substrate 11, a gate insulation layer 13 is arranged on the gate electrode 12, a source electrode 14 and a drain electrode 15 are arranged on the gate insulation layer 13, an organic semiconductor layer 16 is arranged on the source electrode 14 and the drain electrode 15, and a protection film 17 is arranged at the top of the device. The organic semiconductor layer consists of the copolymer of an optical active monomer and a non-optical active monomer, which is expressed by a structural formula (1). COPYRIGHT: (C)2006,JPO&NCIPI
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