发明名称 METHOD AND SYSTEM FOR ADJUSTING A CHEMICAL OXIDE REMOVAL PROCESS USING PARTIAL PRESSURE
摘要 A method and system for trimming a feature on a substrate. During a chemical treatment of the substrate, the substrate is exposed to a reactive gaseous chemistry, such as HF/NH3, under controlled conditions. An inert gas can also be introduced with the reactant gaseous chemistry. A process model is developed for an aspect of the first reactant, an aspect of the second reactant, and an aspect of the optional inert gas. Upon specifying a target trim amount, the process model is utilized to determine a process recipe for achieving the specified target.
申请公布号 WO2005104215(A3) 申请公布日期 2005.12.22
申请号 WO2005US04036 申请日期 2005.02.08
申请人 TOKYO ELECTRON LIMITED;YUE, HONGYU 发明人 YUE, HONGYU
分类号 H01L21/66 主分类号 H01L21/66
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