| 摘要 |
PROBLEM TO BE SOLVED: To realize a semiconductor device which reduces the nonuniformity of the temperature in an element array composed of parallel-connected bipolar transistors when the transistors are operated with large signals. SOLUTION: The semiconductor device has at least one element array including the parallel connection structure of a plurality of bipolar transistors 2-9. The plurality of bipolar transistors 2-9 have emitter layers 18 having approximately the same shape, and the bipolar transistors 3-8 located at other than the outermost side of the element array have collector layers 16 having larger widths than those of the bipolar transistors 2, 9 located at the outermost side of the element array. The radiation resistance of the bipolar transistors 3-8 located at other than the outermost side of the element array to a substrate 1 is lowered to reduce the temperature nonuniformity. COPYRIGHT: (C)2006,JPO&NCIPI
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