HIGH FREQUENCY INTEGRATED CIRCUIT DEVICE

摘要

PROBLEM TO BE SOLVED: To enhance bonding strength between the substrate of a high frequency integrated circuit device and a metal shield cap while reducing the size of the high frequency integrated circuit. SOLUTION: A recess 5 for containing the guide portion 6 of a metal shield cap 4 is provided in the side face of the substrate 1 of a high frequency integrated circuit device. Width of the guide portion 6 is set narrower than that of the recess 5 and a gap 7 is formed between the recess 5 and the guide portion 6. Adhesion of the metal shield cap 4 and the substrate 1 is enhanced by filling the gap 7 with solder 8. COPYRIGHT: (C)2006,JPO&NCIPI