Non-volatile memory using organic bistable device

摘要

The present invention provides an organic bistable device for use in non-volatile memories. The organic bistable device comprises a first and a second metal electrode sandwiching a first and a second organic layer with a metal-nanocluster layer positioned between the first and second organic layers. The device further comprises a first electron blocking layer positioned between the metal-nanocluster layer and one of the metal electrodes. This structure provides an organic bistable device with improved charge retention characteristics.