| 摘要 |
A nitride semiconductor light emitting device includes an emission layer (106) having a multiple quantum well structure where a plurality of quantum well layers and a plurality of barrier layers are alternately stacked. The quantum well layer is formed of XN1-x-y-zAsxPySbz (0≤x≤0.15, 0≤y≤0.2, 0≤z≤0.05, x+y+z>0) where X represents one or more kinds of group III elements. The barrier layer is formed of a nitride semiconductor layer containing at least Al. <IMAGE> |
