SINGLE METAL GATE MATERIAL CMOS USING STRAINED SI-SILICON GERMANIUM HETEROJUNCTION LAYERED SUBSTRATE

摘要

Strained Si/strained SiGe dual-channel layer substrate provides mobility advantage and when used as a CMOS substrate enables single workfunction metal-gate electrode technology. A single metal electrode with workfunction of 4.5 eV produces near ideal CMOS performance on a dual-channel layer substrate that consists sequentially of a silicon wafer, an epitaxially grown 30% Ge relaxed SiGe layer, a compressively strained 60% Ge layer, and a tensile-strained Si cap layer.