| 摘要 |
PROBLEM TO BE SOLVED: To perform plasma processing of a wafer efficiently by cooling the wafer uniformly. SOLUTION: Since a gas dispersion layer 102 composed of such particles as the particle size decreases stepwise toward the surface on the wafer mounting side is employed in an electrostatic chuck device 101, heat transfer medium can be distributed with uniform pressure over the substantially entire contact surface of the gas dispersion layer 102 and a semiconductor wafer 150 without providing irregularities for dispersing heat transfer gas on an electrode 105. Since irregularities are not provided, entire surface of the semiconductor wafer 150 under processing can be attracted electrostatically and the channel resistance of heat transfer gas becomes uniform on the side for attracting the semiconductor wafer 150. Consequently, the pressure of injected heat transfer gas becomes substantially constant on the wafer attraction surface side of the gas dispersion layer 102, and heat transfer effect of the heat transfer gas on the semiconductor wafer 150 can be made uniform. As a result, cooling efficiency of the semiconductor wafer 150 can be enhanced during plasma processing. COPYRIGHT: (C)2006,JPO&NCIPI |
