摘要 |
An in-line heater for use in semiconductor wet chemical processing comprises a single crystal alumina substrate, a resistive heating element disposed on the single crystal alumina substrate, and a protective layer disposed over the resistive heating element. The single crystal alumina substrate has a moderate coefficient of thermal expansion (CTE) that is substantially equivalent to the CTEs of the resistive heating element and the protective layer. Therefore, cracking between the substrate and the protective layer can be minimized. The in-line heater in accordance with this invention exhibits an excellent corrosion-resistance capability even at high temperature and can carry a wide variety of corrosive chemicals including hydrofluoride solution.
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