发明名称 |
Bi-layer etch stop process for defect reduction and via stress migration improvement |
摘要 |
A method of forming a film stack in an integrated circuit, said method comprising depositing a layer of silicon carbide adjacent a first layer of dielectric material, depositing a layer of silicon nitride adjacent the layer of silicon carbide, and depositing a second layer of dielectric material adjacent the layer of silicon nitride.
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申请公布号 |
US2005274955(A1) |
申请公布日期 |
2005.12.15 |
申请号 |
US20040857150 |
申请日期 |
2004.05.28 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
KIM TAE S.;ZHAO JIN;KRUSE NATHAN J.;FISCHER AUGUST J.;WILLECKE RALF B. |
分类号 |
H01L21/30;H01L21/768;(IPC1-7):H01L21/30 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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