| 摘要 |
PROBLEM TO BE SOLVED: To solve such a problem that former in a MONOS type nonvolatile memory, a top silicon oxide film having an ONO structure was formed by an ISSG oxidation of a silicon nitride film, however, when an ISSG oxidation condition becomes strong, an interface state density (Dit) and an electron trap density increase with rewriting, and an ON current of sufficient values cannot be obtained, and consequently a deterioration of a charge retention property cannot be suppressed. SOLUTION: A method of manufacturing a nonvolatile semiconductor memory comprises the steps of: oxidizing the silicon nitride film by using a high concentration ozone gas; and forming the top silicon oxide film. COPYRIGHT: (C)2006,JPO&NCIPI
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