| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing equipment and substrate processing method capable of removing the resist formed on a substrate without damaging the surface of substrate. SOLUTION: An SPM nozzle 2 supplies SPM (sulfuric acid hydrogen peroxide mixture) to the surface of a wafer W held by a spin chuck 1. A two-fluid nozzle 3 supplies a jet of pure water droplets to the surface of the wafer W held by the spin chuck 1. An irregularity is formed on the surface of a resist by destruction of a hardened layer as the jet of pure water droplets is supplied to the surface of the wafer W from the two-fluid nozzle 3. And then SPM of high temperature is supplied to the surface of wafer W from the SPM nozzle 2. So, even if the wafer W which is to be processed is not subjected to ashing process for removing the hardened layer, the resist which is formed on the surface of wafer W and is not required is well removed by oxidation power of SPM. COPYRIGHT: (C)2006,JPO&NCIPI
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