发明名称 Memory device
摘要 A memory device is provided which has: a memory cell to store data; a word line to select the memory cell; a bit line connectable to the selected memory cell; a precharge power supply to supply a precharge voltage to the bit line; a precharge circuit to connect or disconnect the precharge power supply to or from the bit line; and a current limiting element to control the magnitude of a current flowing between the precharge power supply and the bit line at least by two steps according to an operation status.
申请公布号 US2005276134(A1) 申请公布日期 2005.12.15
申请号 US20040024734 申请日期 2004.12.30
申请人 FUJITSU LIMITED 发明人 MORI KAORU;FUJIOKA SHINYA
分类号 G11C11/409;G11C5/14;G11C7/00;G11C11/406;G11C11/4091;G11C11/4094;G11C29/02;(IPC1-7):G11C7/00 主分类号 G11C11/409
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