发明名称 |
Memory device |
摘要 |
A memory device is provided which has: a memory cell to store data; a word line to select the memory cell; a bit line connectable to the selected memory cell; a precharge power supply to supply a precharge voltage to the bit line; a precharge circuit to connect or disconnect the precharge power supply to or from the bit line; and a current limiting element to control the magnitude of a current flowing between the precharge power supply and the bit line at least by two steps according to an operation status.
|
申请公布号 |
US2005276134(A1) |
申请公布日期 |
2005.12.15 |
申请号 |
US20040024734 |
申请日期 |
2004.12.30 |
申请人 |
FUJITSU LIMITED |
发明人 |
MORI KAORU;FUJIOKA SHINYA |
分类号 |
G11C11/409;G11C5/14;G11C7/00;G11C11/406;G11C11/4091;G11C11/4094;G11C29/02;(IPC1-7):G11C7/00 |
主分类号 |
G11C11/409 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|