发明名称 Semiconductor device
摘要 In a semiconductor device, bonding-wires can be applied parallel to each other to electrodes of high-speed signal lines when mounting a highly densified semiconductor element on a low-cost substrate while reducing a length of the bonding-wires. An impedance-matched substrate having wiring that impedance-matched with circuits of a semiconductor element is mounted on a substrate. A plurality of first metal wires connect between first electrodes of the semiconductor element and electrodes of the substrate. A plurality of second metal wires connect between second electrodes of the semiconductor element and first electrodes of the impedance-matched substrate. A plurality of third metal wires connect between second electrodes of the impedance-matched substrate and electrodes of the substrate. The second metal wires extend parallel to each other, and the third metal wires also extend parallel to each other.
申请公布号 US2005269701(A1) 申请公布日期 2005.12.08
申请号 US20040971692 申请日期 2004.10.25
申请人 TSUJI KAZUTO;KUBOTA YOSHIHIRO;ASADA KENJI;HOSOYAMADA SUMIKAZU 发明人 TSUJI KAZUTO;KUBOTA YOSHIHIRO;ASADA KENJI;HOSOYAMADA SUMIKAZU
分类号 H01L23/12;H01L21/60;H01L21/607;H01L23/48;H01L23/552;H01L23/66;(IPC1-7):H01L31/032 主分类号 H01L23/12
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