| 摘要 |
A method for processing a target substrate ( 10 ) in a semiconductor processing apparatus ( 1 ) controls temperature of a first substrate ( 10 ) at a process temperature inside a process container ( 2 ), while supplying a process gas into the process container, thereby subjecting the first substrate to a semiconductor process, during which a by-product film is formed inside the process container. After the semiconductor process and unload of the first substrate ( 10 ) out of the process container ( 2 ), a reforming gas is supplied into the process container, thereby subjecting the by-product film to a reformation process, which is set to reduce thermal reflectivity of the by-product film. After the reformation process, temperature of a second substrate ( 10 ) is controlled at the process temperature inside the process container ( 2 ), while supplying the process gas into the process container, thereby subjecting the second substrate to the semiconductor process.
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