| 摘要 |
PROBLEM TO BE SOLVED: To stabilize the manufacturing process of an MMIC, by reducing the number of manufacturing processes included in the manufacturing process of a conventional MMIC. SOLUTION: In the manufacturing method of the MMIC, an insulating film is deposited on a semiconductor substrate, and opening portions for a gate, a source, and a drain are formed in the insulating film, and thereafter, the formations of the FET electrode portions comprising a gate electrode, a source electrode, and a drain electrode and the formation of the lower electrode of a capacitor element are performed at the same time. Thereby, the manufacturing method of the MMIC is simplified, and the contraction of its manufacturing term, the stabilization of its manufacture, and the reduction of its manufacturing cost are made possible. COPYRIGHT: (C)2006,JPO&NCIPI
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