| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a titanium silicide film which has high thermal resistance and is not condensed even if the titanium silicide film is annealed at 900°C for about 30 minutes. SOLUTION: In a step of depositing a titanium nitride film which contains more titanium atoms than nitrogen atoms on silicon, and a step of forming a titanium silicide by reacting the silicon and the titanium nitride film by heat treatment, an oxygen concentration in the vicinity of the surface of the silicon is 1×10<SP>18</SP>pcs/cm<SP>3</SP>or less. COPYRIGHT: (C)2006,JPO&NCIPI
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