| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor storage for realizing both the multiple banks and high-speed operation of a memory. <P>SOLUTION: The semiconductor storage comprises a plurality of pads for data terminal, and a plurality of memory banks that are accessed independently. Each of the plurality of memory banks is divided into a plurality of memory banks, the pad for data terminal is also divided into a plurality of portions correspondingly, and blocks comprising the divided memory banks and the divided pads for data terminal are arranged so that they do not overlap on a semiconductor chip. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
