| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a piezoelectric element and its manufacturing method by which the orientation or grain size of a piezoelectric layer can be set to a suitable range by controlling characteristics of a layer which is a ground at the time of forming a piezoelectric thin film. <P>SOLUTION: In the structure of a piezoelectric element constituted by forming a piezoelectric layer held between upper and lower electrodes through an oxide film on a substrate, a buffer layer having compression stress to the lower electrode layer is formed between the oxide film and the lower electrode layer. The other piezoelectric element is formed by successively laminating an oxide film, a lower electrode, a buffer layer, a piezoelectric layer, and an upper electrode on a substrate, and the buffer layer is constituted of elements capable of forming the B site of the piezoelectric layer. Further the other piezoelectric element is formed by successively laminating an oxide film, a first buffer layer, a lower electrode layer, a second buffer layer, a piezoelectric layer, and an upper electrode on a substrate, the first buffer layer is constituted of a film of composition having compression stress to the lower electrode layer, and the second buffer layer is constituted of elements capable of forming the B site of the piezoelectric layer. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
