发明名称 SURFACE EMITTING LASER AND ITS MANUFACTURING METHOD, SURFACE EMITTING LASER ARRAY, IMAGE FORMING APPARATUS, OPTICAL PICKUP SYSTEM, OPTICAL TRANSMISSION MODULE, OPTICAL TRANSMISSION RECEPTION MODULE, AND OPTICAL COMMUNICATION SYSTEM
摘要 PROBLEM TO BE SOLVED: To reduce variations of Ga composition and Ga/Al ratio of materials constituting a semiconductor distribution bragg reflection mirror and to controllably etch a surface emitting laser semiconductor film in consideration of a heat dissipation. SOLUTION: In a surface emitting laser wherein activity layers consisting of at least one layer of quantum well activity layers and barrier layers generating a laser beam, a resonator region provided around the activity layers including a spacer layer consisting of at least one kind of materials, and an upper reflection mirror and a lower reflection mirror which are provided at an upper part and a lower part of the resonator region, respectively, are formed as multilayer films on a semiconductor substrate and the multilayer films are processed into a mesa profile by etching, the lower reflection mirror is constituted by a primary lower reflection mirror in which a low refractive index layer consists of AlAs and a secondary lower reflection mirror formed on the primary lower reflection mirror in which a low refractive index layer consists of AlGaAs. Any layers constituting the resonator region include In. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005340779(A) 申请公布日期 2005.12.08
申请号 JP20050088188 申请日期 2005.03.25
申请人 RICOH CO LTD 发明人 SATO SHUNICHI;ITO AKIHIRO
分类号 H01S5/187;H01S5/183;H01S5/227;H01S5/343;(IPC1-7):H01S5/187 主分类号 H01S5/187
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