发明名称 |
SURFACE EMITTING LASER AND ITS MANUFACTURING METHOD, SURFACE EMITTING LASER ARRAY, IMAGE FORMING APPARATUS, OPTICAL PICKUP SYSTEM, OPTICAL TRANSMISSION MODULE, OPTICAL TRANSMISSION RECEPTION MODULE, AND OPTICAL COMMUNICATION SYSTEM |
摘要 |
PROBLEM TO BE SOLVED: To reduce variations of Ga composition and Ga/Al ratio of materials constituting a semiconductor distribution bragg reflection mirror and to controllably etch a surface emitting laser semiconductor film in consideration of a heat dissipation. SOLUTION: In a surface emitting laser wherein activity layers consisting of at least one layer of quantum well activity layers and barrier layers generating a laser beam, a resonator region provided around the activity layers including a spacer layer consisting of at least one kind of materials, and an upper reflection mirror and a lower reflection mirror which are provided at an upper part and a lower part of the resonator region, respectively, are formed as multilayer films on a semiconductor substrate and the multilayer films are processed into a mesa profile by etching, the lower reflection mirror is constituted by a primary lower reflection mirror in which a low refractive index layer consists of AlAs and a secondary lower reflection mirror formed on the primary lower reflection mirror in which a low refractive index layer consists of AlGaAs. Any layers constituting the resonator region include In. COPYRIGHT: (C)2006,JPO&NCIPI
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申请公布号 |
JP2005340779(A) |
申请公布日期 |
2005.12.08 |
申请号 |
JP20050088188 |
申请日期 |
2005.03.25 |
申请人 |
RICOH CO LTD |
发明人 |
SATO SHUNICHI;ITO AKIHIRO |
分类号 |
H01S5/187;H01S5/183;H01S5/227;H01S5/343;(IPC1-7):H01S5/187 |
主分类号 |
H01S5/187 |
代理机构 |
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地址 |
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